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Lely method

A diagram of the modified Lely method, showing a graphite crucible surrounded by induction coils for heating. Silicon carbide charge is sublimated from the bottom of the chamber and deposited on the upper lid, which is cooler.

The Lely method, also known as the Lely process or Lely technique, is a crystal growth technology used for producing silicon carbide crystals for the semiconductor industry. The patent for this method was filed in the Netherlands in 1954 and in the United States in 1955 by Jan Anthony Lely of Philips Electronics.[1] The patent was subsequently granted on 30 September 1958, then was refined by D. R. Hamilton et al. in 1960, and by V. P. Novikov and V. I. Ionov in 1968.[2]

  1. ^ US 2854364, Lely, Jan Anthony, "Sublimation process for manufacturing silicon carbide crystals", published 1958-09-30, assigned to North American Philips Co., Inc. 
  2. ^ Cite error: The named reference Byrappa was invoked but never defined (see the help page).

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