Back Hmotnostní spektrometrie sekundárních iontů Czech Sekundärionen-Massenspektrometrie German طیفسنجی جرمی یون ثانویه Persian Spectrométrie de masse des ions secondaires French SIMS FRR Sekondêre-Ioane-Massa-Spektroskopy (SIMS) Frisian Spektrometri massa ion sekunder ID Spettrometria di massa di ioni secondari Italian 二次イオン質量分析法 Japanese Sekundær ionemassespektrometri NB
 Old magnetic sector SIMS, model IMS 3f, succeeded by the models 4f, 5f, 6f, 7f and most recently, 7f-Auto, launched in 2013 by the manufacturer CAMECA. | |
| Acronym | SIMS |
|---|---|
| Classification | Mass spectrometry |
| Analytes | Solid surfaces, thin films |
| Other techniques | |
| Related | Fast atom bombardment Microprobe |
Secondary-ion mass spectrometry (SIMS) is a technique used to analyze the composition of solid surfaces and thin films by sputtering the surface of the specimen with a focused primary ion beam and collecting and analyzing ejected secondary ions. The mass/charge ratios of these secondary ions are measured with a mass spectrometer to determine the elemental, isotopic, or molecular composition of the surface to a depth of 1 to 2 nm. Due to the large variation in ionization probabilities among elements sputtered from different materials, comparison against well-calibrated standards is necessary to achieve accurate quantitative results. SIMS is the most sensitive surface analysis technique, with elemental detection limits ranging from parts per million to parts per billion.