Thermal oxidation

Furnaces used for diffusion and thermal oxidation at LAAS technological facility in Toulouse, France.

In microfabrication, thermal oxidation is a way to produce a thin layer of oxide (usually silicon dioxide) on the surface of a wafer. The technique forces an oxidizing agent to diffuse into the wafer at high temperature and react with it. The rate of oxide growth is often predicted by the Deal–Grove model.[1] Thermal oxidation may be applied to different materials, but most commonly involves the oxidation of silicon substrates to produce silicon dioxide.

  1. ^ Liu, M.; et al. (2016). "Two-dimensional modeling of the self-limiting oxidation in silicon and tungsten nanowires". Theoretical and Applied Mechanics Letters. 6 (5): 195–199. arXiv:1911.08908. doi:10.1016/j.taml.2016.08.002.

Developed by StudentB