Back Galliumarsenied Afrikaans زرنيخيد الغاليوم Arabic Qallium arsenid Azerbaijani Арсенід галію Byelorussian Галиев арсенид Bulgarian Arsenur de gal·li Catalan Arsenid gallitý Czech Galliumarsenid Danish Galliumarsenid German Arseniuro de galio Spanish

Gallium arsenide

"GaAs" redirects here. For other uses, see Gaas.
Gallium arsenide
Samples of gallium arsenide

GaAs wafer of (100) orientation
Names
Preferred IUPAC name
Gallium arsenide
Identifiers
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.013.741 Edit this at Wikidata
EC Number
  • 215-114-8
MeSH gallium+arsenide
RTECS number
  • LW8800000
UNII
UN number 1557
  • InChI=1S/AsH3.Ga.3H/h1H3;;;; ☒N
    Key: SHVQQKYXGUBHBI-UHFFFAOYSA-N ☒N
  • [Ga]#[As]
  • [Ga+3].[As-3]
Properties
GaAs
Molar mass 144.645 g/mol[1]
Appearance Gray crystals[1]
Odor garlic-like when moistened
Density 5.3176 g/cm3[1]
Melting point 1,238 °C (2,260 °F; 1,511 K)[1]
insoluble
Solubility soluble in HCl
insoluble in ethanol, methanol, acetone
Band gap 1.424 eV (at 300 K)[2]
Electron mobility 9000 cm2/(V·s) (at 300 K)[3]
-16.2×10−6 cgs[4]
Thermal conductivity 0.56 W/(cm·K) (at 300 K)[5]
3.3[4]
Structure[5]
Zinc blende
T2d-F-43m
a = 565.315 pm
Tetrahedral
Linear
Hazards
GHS labelling:
GHS08: Health hazard
Danger
H350, H360F, H372
P261, P273, P301+P310, P311, P501
NFPA 704 (fire diamond)
NFPA 704 four-colored diamondHealth 3: Short exposure could cause serious temporary or residual injury. E.g. chlorine gasFlammability 0: Will not burn. E.g. waterInstability 0: Normally stable, even under fire exposure conditions, and is not reactive with water. E.g. liquid nitrogenSpecial hazards (white): no code
3
0
0
Safety data sheet (SDS) External MSDS
Related compounds
Other anions
 Gallium nitride
Gallium phosphide
Gallium antimonide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.

Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.[6]

GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.

  1. ^ a b c d Haynes, p. 4.64
  2. ^ Blakemore, J. S. "Semiconducting and other major properties of gallium arsenide", Journal of Applied Physics, (1982) vol 53 Nr 10 pages R123-R181
  3. ^ Haynes, p. 12.90
  4. ^ a b Haynes, p. 12.86
  5. ^ a b Haynes, p. 12.81
  6. ^ Moss, S. J.; Ledwith, A. (1987). The Chemistry of the Semiconductor Industry. Springer. ISBN 978-0-216-92005-7.

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